As a part of JST PRESTO program, associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...

The first article in this series considered the use of ferroelectrics to improve subthreshold swing behavior in logic transistors. The prospects for ferroelectrics in logic applications are uncertain, ...

“Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, ...