In a fin-type or nanosheet field effect transistor (FET) of a logic semiconductor device, it has been proposed to use metal gate materials, for examples, metal carbides (TiC, TiAlC) and metal nitrides ...
A review of Ion Beam technology is presented in this paper. The key applications and benefits of using ion beam technology for etching processes in comparison to technology such as plasma etching will ...
To store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be studied in greater detail. By investigating new approaches to making digital ...
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