Abstract: As the feature size of dynamic random access memories (DRAM) continues to scale down, the shrunk storage capacitors have met essential challenges, namely, the insufficient capacitances and ...
Abstract: To satisfy the demand of high-speed and low-power non-volatile memory in the field of integrated circuits for in-memory computing, HfO2-based ferroelectric tunnel junctions have been ...
Chemical Engineering Department, College of Engineering, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback